Welcome on the NAM6 group web site

The Micro and Nano Systems (NAM6) group is developing a world-renowned expertise over many years, predominantly in the field of micro-actuation, micro-sensing, resonant devices and transduction schemes. The main objective of the NAM6 group is to tackle state-of-the-art challenges in the micro- and nano-electromechanical systems (MEMS and NEMS) fields of research by pursuing a threefold strategy:

  1. to benefit from the synergy of skills and know-how of the NAM6 personnel and the IEMN environment in applied physics, electronic devices, scientific instruments, modelling, process development, fabrication and characterization;
  2. to define research directions and objectives through a pragmatic balance of technological/scientific-pushed and application-pulled considerations;
  3. to address the research topics from fundamental understanding and physical modelling, to device fabrication and evaluation, and furthermore to system integration and potential technological transfer.

By taking advantage of the cleanroom facilities at IEMN, micro- and nano-machining techniques have been effectively employed to explore and convert physical effects and material properties into devices/systems for applications. Research activities  concern:

  1. Giant piezoresistive effects in silicon and its nanostructures,
  2. MEMS devices based on gallium nitride,
  3. MEMS resonators for application as high-frequency atomic force microscopy sensors
  4. Instrumentation for nano-characterization.
Figure: (a) A 4 terminal aluminium-silicon hybrid structure fabricated at IEMN which displays giant piezoresistance. Scale bar = 20 µm. (b) A top-down silicon nanowire fabricated at IEMN used for giant piezoresistance studies. Scale bar = 2 µm. Figure: (a) Top view of the AlGaN/GaN MEMS resonator. On the right, the piezoelectric actuator uses the AlGaN layer sandwiched between a top electrode and the two-dimensional election gas. On the left the R-HEMT is fabricated on the resonant beam for motion detection. (b) Measured S21 parameter between the input and the output of the beam resonator. The black curve shows the signal obtained using the R-HEMT as an amplifier, the blue curve shows the signal obtained using the gate as a capacitive detector. The gain of 30 dB provided by the R-HEMT shows the advantage of the integration of the HEMT on the resonant beam. Figure: (a) SEM image of a MEMS AFM sensor based on a silicon ring resonator. Vibration is driven and sensed by integrated capacitive transducers featuring sub-100 nm airgaps. A silicon nanotip (apex radius below 10 nm) is located at a maximum of the elliptic vibration mode. (b) and (c): AFM topographic images of DNA origamis acquired by a 10.9 MHz MEMS AFM sensor. AFM tip vibration amplitude is 0.2 nm. Figure: Block diagram of the experimental set-up used to measure MEMS resonator vibration with the microwave reflectometry technique.